Projects

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Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 40:Test methods of micro-electromechanical inertial shock switch threshold

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 41: RF MEMS circulators and isolators

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 42: Measurement methods of electro-mechanical conversion characteristics of piezoelectric MEMS cantilever

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 43: Test method of electrical characteristics after cyclic bending deformation for flexible micro-electromechanical devices

50.60 Close of voting. Proof returned by secretariat

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 44: Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices

60.60 Standard published

TC 47/SC 47F

Semiconductor devices - Micro-electromechanical devices - Part 45: Silicon based MEMS fabrication technology - Measurement method of impact resistance of nanostructures

40.99 Full report circulated: DIS approved for registration as FDIS

TC 47/SC 47F