Menu

0

IEC 63284:2022 ED1

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Publication date:   Apr 21, 2022

General information

60.60 Standard published   Apr 21, 2022

IEC

TC 47

International Standard

31.080.30   Transistors

Buying

  Published

PDF - €96.80

  English   French  



Buy

Scope

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

Life cycle

NOW

PUBLISHED
IEC 63284:2022 ED1
60.60 Standard published
Apr 21, 2022