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IEC 63284:2022 ED1

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors IEC 63284:2022 ED1

Publication date:   Apr 21, 2022

General information

60.60 Standard published   Apr 21, 2022

IEC

TC 47

International Standard

31.080.30   Transistors

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Scope

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

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PUBLISHED
IEC 63284:2022 ED1
60.60 Standard published
Apr 21, 2022