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IEC 62880-1:2017 ED1

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard IEC 62880-1:2017 ED1

Publication date:   Aug 23, 2017

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60.60 Standard published   Aug 23, 2017

IEC

TC 47

International Standard

31.080.01   Semiconductor devices in general

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IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

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IEC 62880-1:2017 ED1
60.60 Standard published
Aug 23, 2017