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IEC 62047-9:2011 ED1

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS IEC 62047-9:2011 ED1

Publication date:   Jul 13, 2011

General information

60.60 Standard published   Jul 13, 2011

IEC

TC 47/SC 47F

International Standard

31.080.99   Other semiconductor devices

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Scope

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Life cycle

NOW

PUBLISHED
IEC 62047-9:2011 ED1
60.60 Standard published
Jul 13, 2011

CORRIGENDA / AMENDMENTS

PUBLISHED
IEC 62047-9:2011/COR1:2012 ED1