EN IEC 60749-17:2019

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

Publication date:   Oct 16, 2019

General information

60.60   Standard published   May 10, 2019

CENELEC

CLC/TC 47X

European Norm

31.080.01   Semiconductor devices in general

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Scope

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

Life cycle

PREVIOUSLY

WITHDRAWN
EN 60749-17:2003

NOW

PUBLISHED
EN IEC 60749-17:2019
60.60 Standard published
May 10, 2019