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EN 62417:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) EN 62417:2010

Publication date:   Sep 16, 2010

General information

60.60 Standard published   May 7, 2010

CENELEC

CLC/SR 47 Semiconductor devices

European Norm

31.080   Semiconductor devices

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Scope

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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PUBLISHED
EN 62417:2010
60.60 Standard published
May 7, 2010