IEC 62047-26:2016 ED1

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures IEC 62047-26:2016 ED1

Publication date:   Jan 7, 2016

General information

60.60 Standard published   Jan 7, 2016


TC 47/SC 47F

International Standard

31.080.99   Other semiconductor devices



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IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Life cycle


IEC 62047-26:2016 ED1
60.60 Standard published
Jan 7, 2016