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IEC 63275-2:2022 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation IEC 63275-2:2022 ED1

Publication date:   May 11, 2022

General information

60.60 Standard published   May 11, 2022

IEC

TC 47

International Standard

31.080.30   Transistors

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Scope

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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PUBLISHED
IEC 63275-2:2022 ED1
60.60 Standard published
May 11, 2022