IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells. The performance test methods in this document include read, forming, SET, RESET, endurance and retention. This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.
PUBLISHED
IEC 62951-9:2022 ED1
60.60
Standard published
Dec 14, 2022