Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET IEC 62373-1:2020 ED1
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
Life cycle
NOW
PUBLISHED IEC 62373-1:2020 ED1 60.60
Standard published Jul 15, 2020