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IEC 62047-16:2015 ED1

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods IEC 62047-16:2015 ED1

Publication date:   Mar 5, 2015

General information

60.60   Standard published   Mar 5, 2015

IEC

TC 47/SC 47F

International Standard

31.080.99   Other semiconductor devices

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IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

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PUBLISHED
IEC 62047-16:2015 ED1
60.60 Standard published
Mar 5, 2015




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