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IEC 60747-9:2007 ED2

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 60747-9:2007 ED2

Publication date:   Sep 26, 2007

General information

99.60 Withdrawal effective   Nov 13, 2019

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IEC

TC 47/SC 47E

International Standard

31.080.30   Transistors | 31.080.01   Semiconductor devices in general

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Revised

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Scope

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
The major changes with respect to the previous edition are mainly of an editorial nature.

Life cycle

PREVIOUSLY

WITHDRAWN
IEC 60747-9:1998 ED1

WITHDRAWN
IEC 60747-9:1998/AMD1:2001 ED1

ABANDON
IEC 60747-9/AMD2 ED1

NOW

WITHDRAWN
IEC 60747-9:2007 ED2
99.60 Withdrawal effective
Nov 13, 2019

REVISED BY

PUBLISHED
IEC 60747-9:2019 ED3