EN IEC 60749-34-1:2025

Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module EN IEC 60749-34-1:2025

Publication date:   Oct 15, 2025

Scope

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.

If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.

This test caused wear-out and is considered destructive.