EN IEC 60749-23:2026

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life EN IEC 60749-23:2026

Publication date:   Mar 17, 2026

General information

60.60   Standard published   Jan 30, 2026

CENELEC

CLC/TC 47X

European Norm

31.080.01   Semiconductor devices in general

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Scope

IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

This edition includes the following significant technical changes with respect to the previous edition:

a) absolute stress test definitions and resultant test durations have been updated.

Life cycle

PREVIOUSLY

PUBLISHED
EN 60749-23:2004

PUBLISHED
EN 60749-23:2004/A1:2011

NOW

PUBLISHED
EN IEC 60749-23:2026
60.60 Standard published
Jan 30, 2026




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