Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.
WITHDRAWN
EN 60749-34:2004
99.60
Withdrawal effective
Dec 1, 2013
PUBLISHED
EN 60749-34:2010