prEN 62373-1

Semiconductor devices - Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1: Fast BTI Test method

Scope

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.