IEC 63740 ED1

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs (Fast Track) IEC 63740 ED1

General information

40.20   DIS ballot initiated: 12 weeks   Jul 17, 2026

PRVC    Oct 9, 2026

IEC

TC 47

International Standard

Life cycle

NOW

IN_DEVELOPMENT
IEC 63740 ED1
40.20 DIS ballot initiated: 12 weeks
Jul 17, 2026




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