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IEC 63068-1:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Publication date:   Jan 30, 2019

General information

60.60   Standard published   Jan 30, 2019

IEC

TC 47

International Standard

31.080.99   Other semiconductor devices

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Scope

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

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PUBLISHED
IEC 63068-1:2019 ED1
60.60 Standard published
Jan 30, 2019