ISO 17109:2015

Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

Publication date:   Jul 28, 2015

95.99 Withdrawal of Standard   Mar 1, 2022

General information

95.99 Withdrawal of Standard   Mar 1, 2022

ISO

ISO/TC 201/SC 4 Depth profiling

International Standard

71.040.40   Chemical analysis

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Scope

ISO 17109:2015 specifies a method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration. The method has a typical accuracy in the range 5 % to 10 % for layers 20 nm to 200 nm thick when sputter depth profiled using AES, XPS, and SIMS. The sputtering rate is determined from the layer thickness and the sputtering time between relevant interfaces in the reference sample and this is used with the sputtering time to give the thickness of the sample to be measured. The determined ion sputtering rate can be used for the prediction of ion sputtering rates for a wide range of other materials so that depth scales and sputtering times in those materials can be estimated through tabulated values of sputtering yields and atomic densities.

Life cycle

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WITHDRAWN
ISO 17109:2015
95.99 Withdrawal of Standard
Mar 1, 2022

CORRIGENDA / AMENDMENTS

Amended by
ISO 17109:2015/DAmd 1

REVISED BY

PUBLISHED
ISO 17109:2022