IEC 62979:2017 ED1

Photovoltaic modules - Bypass diode - Thermal runaway test IEC 62979:2017 ED1

Publication date:   Aug 10, 2017

General information

60.60 Standard published   Aug 10, 2017

IEC

TC 82

International Standard

27.160   Solar energy engineering

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Scope

IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

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PUBLISHED
IEC 62979:2017 ED1
60.60 Standard published
Aug 10, 2017