Revised
Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.
WITHDRAWN
IEC PAS 62206:2000 ED1
WITHDRAWN
IEC 60749-34:2004 ED1
99.60
Withdrawal effective
Oct 28, 2010
PUBLISHED
IEC 60749-34:2010 ED2