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Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-17: Graphene-based material - Order parameter: X-ray diffraction and transmission electron microscopy
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-18: Graphene-based material - Functional groups: TGA-FTIR
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-19: Graphene-based material - Elemental composition: CS analyser, ONH analyser
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-20: Graphene-based material - Metallic impurity content: Inductively coupled plasma mass spectrometry
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-21: Graphene-based material - Elemental composition, C/O ratio: X-ray photoelectron spectroscopy
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-2: Graphene - Number of layers: atomic force microscopy, optical transmission, Raman spectroscopy
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-22: Graphene-based material - Ash content: Incineration
60.60 Standard published
Nanomanufacturing - Key control characteristics - Part 6-23: Graphene film - Sheet resistance, Carrier density, Carrier mobility: Hall bar
20.99 WD approved for registration as CD
Nanomanufacturing - Key control characteristics - Part 6-24: Graphene film - Number of layers: Optical contrast
20.99 WD approved for registration as CD
Nanomanufacturing - key control characteriastics - Part 6-26: 2D materials - Fracture stain and stress, Young’s modulus, residual strain and stress: Bulge test
40.99 Full report circulated: DIS approved for registration as FDIS
IEC TS 62607-6-27 Nanomanufacturing - Key control characteristics-– Part 06-27: Two-dimensional materials - Field-effect mobility: 4-Point Probe Field-Effect Transistor method
30.60 Close of voting/ comment period
IEC TS 62607-6-28 Nanomanufacturing - Key control characteristics - Part 6-28: Graphene-based material - Number of layers: Raman spectroscopy
40.99 Full report circulated: DIS approved for registration as FDIS
Nanomanufacturing - Key control characteristics - Part 6-29: Graphene-based materials - Defectiveness: Raman spectroscopy
30.60 Close of voting/ comment period
Nanomanufacturing - Key control characteristics - Part 6-30: Graphene-based material - Anion concentration: Ion chromatography method
50.00 Final text received or FDIS registered for formal approval
Nanomanufacturing - Key control characteristic - Part 6-31: Graphene in powder form - Specific surface area: Brunauer-Emmett-Teller method
20.99 WD approved for registration as CD
Nanomanufacturing - Key control characteristics - Part 6-3: Graphene-based material - Domain size: substrate oxidation
60.60 Standard published
Nanomanufacturing – Key control characteristics – Part 6-32: Two-dimensional materials – Charge carrier mobility, contact resistance, sheet resistance, doping, and hysteresis: Gated transfer length method
20.99 WD approved for registration as CD